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1. general description the sa58635 is a stereo, class-g headphone driver with i 2 c-bus volume control. the i 2 c-bus control allows maximum flexibility wi th digital volume c ontrol, in dependent channel enable and mute control. the output of the sa58635 is referenced around true ground zero. it is designed to operate at the low supply current of 1.5 ma making it battery friendly. a unique power management technique provides class-g power efficiency by using a buck converter to step down the battery supply from a typical lithium ion battery (4.8 v to 2.3 v). efficiency is further increased by allo wing the output amplifier/ driver to operate at multiple voltage rails based on the output/input swing. the sa58635 delivers 2 25 mw minimum into 16 and 32 loads. the sa58635 provides thermal shutdown and self limiting current protection. the sa58635 is a high fidelity hp driver amplifier with a s/n of 100 db minimum. an excellent psrr of more than 100 db, differ ential input circuit topology allows for maximum noise immunity in the noisy mobile phone environment. the sa58635 is available in a 16-bump wlcsp (wafer level chip-size package) making it ideal choice for cellular handsets and portable media players. 2. features ? power supply range: 2.3 v to 5.5 v ? high efficiency employing class-g dynamic power management ? 2 25 mw into 16 or 32 at thd+n = 1 % ? very low thd+n at 0.02 % at v o of 0.7v o(rms) and r l of 47 ? integrated charge pump to eliminate dc blocking capacitors, reduce cost and pcb space while improving low frequency audio fidelity ? excellent psrr: > 100 db ? s/n performance of 100 db minimum ? low supply current: 1.5 ma typical ? low shutdown current: 5 a maximum ? i 2 c-bus interface for ? 59 db to 4 db volume control, independent channel enable, mute and software shutdown ? self limiting current with thermal protection and ground loop noise suppression ? pop-and-click suppression ? available in 1.7 mm 1.7 mm 16-bump wlcsp sa58635 2 25 mw class-g stereo headphone driver with i 2 c-bus volume control rev. 01 ? 26 march 2010 product data sheet
sa58635_1 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 26 march 2010 2 of 30 nxp semiconductors sa58635 2 25 mw class-g stereo headphone driver 3. applications ? wireless and cellular handsets ? portable media players ? portable dvd player ? notebook pc ? high fidelity applications 4. ordering information 5. block diagram table 1. ordering information type number package name description version SA58635UK wlcsp16 wafer level chip-size package; 16 balls; 1.7 1.7 0.56 mm SA58635UK fig 1. block diagram of sa58635 002aad931 inlp class-g control inln i 2 c-bus interface cpp cpn outl sda scl agnd sa58635 buck converter avdd sw hpvdd thermal/short-circuit protection outr charge pump hpvss sgnd volume control inrp inrn
sa58635_1 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 26 march 2010 3 of 30 nxp semiconductors sa58635 2 25 mw class-g stereo headphone driver 6. pinning information 6.1 pinning 6.2 pin description fig 2. pin configuration for wlcsp16 fig 3. ball mapping for wlcsp16 002aaf27 3 SA58635UK transparent top view d b c a 24 13 ball a1 index area sw avdd outl 12 3 agnd cpp hpvdd a b cpn hpvss sgnd c 002aad93 3 transparent top view inln 4 inlp inrp sda scl outr d inrn table 2. pin description symbol pin description sw a1 buck converter switching mode avdd a2 analog supply; same as battery outl a3 headphone left channel output inln a4 left channel negative differential input agnd b1 analog supply ground cpp b2 charge pump positive capacitor hpvdd b3 buck converter output voltage inlp b4 left channel positive differential input cpn c1 charge pump negative capacitor hpvss c2 charge pump nega tive output voltage sgnd c3 ground sense; connect to headphone jack ground inrp c4 right channel positive differential input sda d1 i 2 c-bus serial data scl d2 i 2 c-bus serial clock outr d3 headphone right channel output inrn d4 right channel negative differential input
sa58635_1 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 26 march 2010 4 of 30 nxp semiconductors sa58635 2 25 mw class-g stereo headphone driver 7. functional description refer to figure 1 ? block diagram of sa58635 ? . 7.1 device address following a start condition, the bus master must output the address of the slave it is accessing. the sa58635 responds to two slave addresse s: 1100 000xb for standard accesses and the general call writes (0000 0000b) for software reset. the last bit of the address byte defines the operation to be performed. when set to logic 1 a read is selected, while a logic 0 selects a write operation. when a reset of the i 2 c-bus needs to be performed by th e master, the master will write to the general call address followed by a write of the reset command (0000 0110b). when a general call reset command is sent by the master, the sa58635 will respond with an acknowledge and execute a reset to the digital logic. this will return the regi ster set and the volume controls to the power-on reset (por) values. 7.2 control register following the successful acknowledgement of the slave address, the bus master will send a byte to the sa58635, which will be stored in the control register. the lowest 3 bits are used as a pointer to determine which re gister will be accessed (d[2:0]). the remaining bits are not used and are ignored. 7.3 register definitions table 3. register summary register number (hex) name type function 00 - - reserved; this address is empty and will be nacked. 01 mode1 read/write contains the left and right channel amplifier enable bits, thermal status and the software shutdown bit. 02 volctl read/write volume setting and mute left and right bits. 03 hiz read/write high-impedance cont rols for left and right channel. 04 id read only vendor identification and chip version number. 05 - - reserved; this address is empty and will be nacked. 06 test1 read/write this register is for manufacturing test. 07 - read/write reserved; this regi ster is empty and will be nacked.
sa58635_1 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 26 march 2010 5 of 30 nxp semiconductors sa58635 2 25 mw class-g stereo headphone driver 7.3.1 mode1 register, mode1 7.3.2 volume control register, volctl 7.3.3 high-impedance register, hiz table 4. mode1 - mode register 1 (address 01h) bit description legend: * default value. bit symbol access value description 7 hp_en_l r/w 0* left channel inactive. a zero will turn off the left channel. 1 left channel active. 6 hp_en_r r/w 0* right channel inactive. a zero will turn off the right channel. 1 right channel active. 5 - read only 0* reserved; always reads back as a 0. 4 - read only 0* reserved; always reads back as a 0. 3 - read only 0* reserved; always reads back as a 0. 2 - read only 0* reserved; always reads back as a 0. 1 thermal read only 0* device is operating normally. 1 device is in thermal shutdown. 0 sws r/w 0* device is enabled. 1 software shutdown; charge pump is disabled. table 5. volctl - volume control register (address 02h) bit description legend: * default value. bit symbol access value description 7 mutel r/w 0 a zero indicates that the left channel is not muted. 1* left channel is muted. 6 muter r/w 0 a zero indicates th at the right channel is not muted. 1* right channel is muted. 5 to 1 vol[4:0] r/w 0* these bits indica te the volume on the outputs per the gain table shown in ta b l e 9 . 0 - read only 0* this bit is reserved and will always return a zero. table 6. hiz - high-impedance regist er (address 03h) bit description legend: * default value. bit symbol access value description 7 to 2 - read only 0* unused; always returns 0. 1 hizl r/w 0* device outputs are not in high-impedance. 1 device outputs are in high-impedance. 0 hizr r/w 0* device outputs are not in high-impedance. 1 device outputs are in high-impedance.
sa58635_1 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 26 march 2010 6 of 30 nxp semiconductors sa58635 2 25 mw class-g stereo headphone driver 7.3.4 chip identification register, id 7.3.5 test register 1, test1 table 7. id - chip identi fication register (address 04h) bit description legend: * default value. bit symbol access value description 7 to 6 supplier read only 11b* this is the supplier identification for this device, indicating that this device is manufactured by nxp semiconductors. 5 to 4 - read only 00b* unused; always returns 0. 3 to 0 ver[3:0] read only 0000b these bits indicate the version number for this device. initial silicon will be set to 0h. table 8. test1 - test register 1 (address 06h) bit description legend: * default value. bit symbol access value description 7 to 0 - r/w 00h* software should refrain from writing to this register. software should write only 0?s to this register. values other than 0 may cause the part to not function as expected.
sa58635_1 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 26 march 2010 7 of 30 nxp semiconductors sa58635 2 25 mw class-g stereo headphone driver 7.4 volume control volume levels are set in the volctl register (register 02h) as described in section 7.3.2 . as the volume is chan ged including muting and un-mutin g, the sa58635, will step to the new value at an incremental (o r decremental) rate of ap proximately one millisecond per step. a full sweep from 00h to 1fh will take roughly 32 milliseconds. the volctl register values represent a gain on the output channels as indicated in ta b l e 9 . table 9. volume and gain control volume control word gain 0.5 (db) 0000 000x ? 59 0000 001x ? 55 0000 010x ? 51 0000 011x ? 47 0000 100x ? 43 0000 101x ? 39 0000 110x ? 35 0000 111x ? 31 0001 000x ? 27 0001 001x ? 25 0001 010x ? 23 0001 011x ? 21 0001 100x ? 19 0001 101x ? 17 0001 110x ? 15 0001 111x ? 13 0010 000x ? 11 0010 001x ? 10 0010 010x ? 9 0010 011x ? 8 0010 100x ? 7 0010 101x ? 6 0010 110x ? 5 0010 111x ? 4 0011 000x ? 3 0011 001x ? 2 0011 010x ? 1 0011 011x 0 0011 100x +1 0011 101x +2 0011 110x +3 0011 111x +4 1xxx xxxx mute left active x1xx xxxx mute right active
sa58635_1 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 26 march 2010 8 of 30 nxp semiconductors sa58635 2 25 mw class-g stereo headphone driver 7.5 power-on reset when power is applied to avdd, an internal power-on reset holds the sa58635 in a reset condition until avdd has reached v por . at this point, the reset condition is released and the sa58635 registers and i 2 c-bus state machine are initialized to their default states (all zeroes) causing all the channels to be deselected. thereafter, avdd must be lowered below 0.2 v to reset the device. 8. characteristics of the i 2 c-bus the i 2 c-bus is for 2-way, 2-line communication between different ics or modules. the two lines are a serial data line (sda) and a serial clock line (scl). both lines must be connected to a positive supply via a pull-up re sistor when connected to the output stages of a device. data transfer may be initiated only when the bus is not busy. 8.1 bit transfer one data bit is transferred during each clock pulse. the data on the sda line must remain stable during the high period of the clock pulse as changes in the data line at this time will be interpreted as control signals (see figure 4 ). 8.1.1 start and stop conditions both data and clock lines remain high when the bus is not busy. a high-to-low transition of the data line while the clock is hi gh is defined as the start condition (s). a low-to-high transition of the data line while the clock is high is defined as the stop condition (p) (see figure 5 ). fig 4. bit transfer mba60 7 data line stable; data valid change of data allowed sda scl fig 5. definition of start and stop conditions mba60 8 sda scl p stop condition s start condition
sa58635_1 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 26 march 2010 9 of 30 nxp semiconductors sa58635 2 25 mw class-g stereo headphone driver 8.2 system configuration a device generating a message is a ?transmitter ?; a device receiving is the ?receiver?. the device that controls the message is the ?master? and the devices which are controlled by the master are the ?slaves? (see figure 6 ). 8.3 acknowledge the number of data bytes transferred betwe en the start and the stop conditions from transmitter to receiver is not limited. ea ch byte of eight bits is followed by one acknowledge bit. the acknowledge bit is a high level put on the bus by the transmitter, whereas the master generates an extra acknowledge related clock pulse. a slave receiver which is addressed must gen erate an acknowledge af ter the reception of each byte. also a master must generate an acknowledge after the reception of each byte that has been clocked out of the slave transm itter. the device that acknowledges has to pull down the sda line during the acknowledge cl ock pulse, so that the sda line is stable low during the high period of the acknowledge related clock pulse; set-up time and hold time must be taken into account. a master receiver must signal an end of da ta to the transmitter by not generating an acknowledge on the last byte that has been cloc ked out of the slave. in this event, the transmitter must leave the data line high to enable the master to generate a stop condition. fig 6. system configuration 002aaa966 master transmitter/ receiver slave receiver slave transmitter/ receiver master transmitter master transmitter/ receiver sda scl i 2 c-bus multiplexer slave fig 7. acknowledgement on the i 2 c-bus 002aaa98 7 s start condition 9 8 2 1 clock pulse for acknowledgement not acknowledge acknowledge data output by transmitter data output by receiver scl from master
sa58635_1 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 26 march 2010 10 of 30 nxp semiconductors sa58635 2 25 mw class-g stereo headphone driver 9. bus transactions (1) see table 3 for register definition. fig 8. write to a specific register a5 a4 a3 a2 a1 a0 0 a s a6 slave address start condition r/w acknowledge from slave 002aad61 2 data for register d[5:0] (1) x d5 d4 d3 d2 d1 d0 x control register auto-increment flag a acknowledge from slave a acknowledge from slave p stop condition fig 9. software reset 0 0 0 0 0 0 0 a s 0 general call start condition r/w acknowledge from slave 002aae11 8 0 0 0 0 1 1 0 0 software reset a acknowledge from slave p stop condition
sa58635_1 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 26 march 2010 11 of 30 nxp semiconductors sa58635 2 25 mw class-g stereo headphone driver 10. limiting values [1] v dd is the supply voltage on pin avdd. [2] breakdown current of output protection diodes. [3] esd shock needs to be conduc ted to the connector pins (see figure 10 ). all functions of a device/system perform as designed during and after exposure to a disturbance. remark: external esd suppressor asip protects the amplifier outputs. suppressor is between amplifier and connector; 15 serial resistance + 5 nf capacitor and zener diodes (14 v breakdown voltage) connected to the ground. in addition, there is a ferrite bead in series between suppressor and connector (see figure 10 ). remark: air discharge test can be ignored if cont act discharge test range is increased to co rresponding same voltages as air discharge (reason: contact discharge is more stabl e and repeatable test than air discharge). table 10. limiting values in accordance with the absolute ma ximum rating system (iec 60134). [1] symbol parameter conditions min max unit v dd supply voltage active mode ? 0.3 +6.0 v shutdown mode ? 0.3 +6.0 v v i input voltage inrn, inrp, inln, inlp ? 0.3 2.1 v v io input/output voltage scl, sda v agnd ? 0.5 v dd v i br breakdown current continuous [2] -200ma p power dissipation wlcsp16; derating factor 10 mw/k t amb =25 c - 1000 mw t amb =70 c-550mw t amb =85 c-400mw t amb ambient temperature operating in free air ? 40 +85 c t j junction temperature operating ? 40 +85 c t stg storage temperature ? 65 +150 c v esd electrostatic discharge voltage human body model 4000 - v machine model 300 - v charged-device model 750 - v device use level: iec61000-4-2 level 4, contact [3] 30 - kv iec61000-4-2 level 4, air discharge [3] 30 - kv fig 10. esd suppressor asip esd asip 002aae11 9 sa58635 outr outl sgnd agnd agnd fb fb shield a1 a2 b2 c2 c1 ip5311cx5/lf
sa58635_1 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 26 march 2010 12 of 30 nxp semiconductors sa58635 2 25 mw class-g stereo headphone driver 11. static characteristics [1] v dd is the supply voltage on pin avdd. table 11. static characteristics v dd = 3.6 v; r l =15 +32 ; two channels in phase; t amb =25 c, unless otherwise specified. [1] symbol parameter conditions min typ max unit v dd supply voltage continuous 2.3 - 5.5 v i dd supply current both channels enabled; no audio signal -1.5-ma i dd(sd) shutdown mode supply current i 2 c-bus in operation - 1 5 a v i(cm) common-mode input vo ltage differential ? 1.3 - +1.3 v v por power-on reset voltage - 2.1 - v | v o(offset) | output offset voltage absolute value; both channels enabled -0.53mv psrr power supply rejection ratio g v = 0 db 100 - - db z i input impedance differential 20 - - k z o output impedance high-impedance mode <40 khz 10 - - k 6mhz 500 - - 36 mhz 75 - - i 2 c-bus pins (scl, sda) i ol low-level output current sda output; v ol =0.4v; v dd =3.6v 3-- ma i li input leakage current scl, sda ? 1-+1 a c i input capacitance scl, sda - - 10 pf v ih high-level input voltage scl, sda 1.2 - - v v il low-level input voltage scl, sda - - 0.6 v fig 11. supply current versus supply voltage 002aaf009 v dd (v) 2.5 5.5 4.5 3.5 4 6 2 8 10 i dd (ma) 0
sa58635_1 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 26 march 2010 13 of 30 nxp semiconductors sa58635 2 25 mw class-g stereo headphone driver 12. dynamic characteristics [1] v dd is the supply voltage on pin avdd. table 12. dynamic characteristics v dd = 3.6 v; r l =15 +32 ; two channels in phase; t amb =25 c; unless otherwise specified. [1] symbol parameter conditions min typ max unit p o output power stereo; f = 1 khz; thd+n = 1 % 2 25 - - mw i dd supply current output 2 100 w at 3 db crest factor - 2.5 3.5 ma output 2 500 w at 3 db crest factor - 4.5 5.5 ma output 2 1 mw at 3 db crest factor - 6.5 7.5 ma v o(rms) rms output voltage amplifier r l =16 ; thd+n = 1 %; l + r in phase 0.63 - - v r l =32 ; thd+n = 1 %; l + r in phase 0.89 - - v thd+n total harmonic distortion-plus-noise f=1khz; v o = 700 mv (rms) - - 0.02 % svrr supply voltage ripple rejection g v = 4 db; f = 217 hz 75 - - db ct(ch) channel crosstalk p o = 15 mw; f = 1 khz 90 - - db line out > 10 k 80 - - db v n(o)(rms) rms output noise voltage g v = 4 db; a-weight - 7 - v t d(sd-startup) delay time from shutdown to start-up --15ms s/n signal-to-noise ratio v o = 1 v (rms); f = 1 khz 100 - - db t off switch-off temperature threshold - 180 - c hysteresis - 35 - c (1) thd+n = 10 % (2) thd+n = 1 % (1) thd+n + 10 % (2) thd+n + 1 % a. r l = 16 ; in phase b. r l =32 ; in phase fig 12. output power per channel versus supply voltage v dd (v) 2.5 5.5 4.5 3.5 002aaf025 20 40 60 p o (mw) 0 (1) (2) v dd (v) 2.5 5.5 4.5 3.5 002aaf026 20 40 60 p o (mw) 0 (1) (2)
sa58635_1 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 26 march 2010 14 of 30 nxp semiconductors sa58635 2 25 mw class-g stereo headphone driver a. thd+n = 1 %; in phase b. thd+n = 1 %; out of phase (1) v dd = 2.5 v (2) v dd = 3.6 v (3) v dd = 5 v fig 13. output power per channel versus load resistance 002aaf027 r l ( ) 10 10 3 10 2 40 60 20 80 100 p o (mw) 0 (3) (1) (2) (3) 002aaf028 r l ( ) 10 10 3 10 2 40 60 20 80 100 p o (mw) 0 (1) (2) a. f = 1 khz; r l =16 b. f = 1 khz; r l =32 fig 14. supply current versus total output power 002aaf029 p o(tot) (mw) 10 ? 3 10 2 10 10 ? 2 1 10 ? 1 10 10 2 i dd (ma) 1 v dd = 5.0 v 3.6 v 2.5 v 002aaf030 p o(tot) (mw) 10 ? 3 10 2 10 10 ? 2 1 10 ? 1 10 10 2 i dd (ma) 1 v dd = 5.0 v 3.6 v 2.5 v
sa58635_1 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 26 march 2010 15 of 30 nxp semiconductors sa58635 2 25 mw class-g stereo headphone driver (1) r l =16 (2) r l =32 f = 1 khz; thd+n = 1 % (1) r l =16 (2) r l =32 (3) r l = 600 (4) r l 1000 fig 15. total power dissipation versus total output power fig 16. rms output voltage versus supply voltage r l =16 ; p o =15mw r l =16 fig 17. crosstalk versus frequency fig 18. output amplitude versus frequency 002aaf031 p o(tot) (mw) 10 ? 2 10 2 10 10 ? 1 1 10 2 10 10 3 p tot (mw) 1 (1) (2) 002aaf032 v dd (v) 2.5 5.5 4.5 3.5 1.0 1.2 0.8 1.4 1.6 v o(rms) (v) 0.6 (1) (2) (3) (4) 002aaf033 f (hz) 10 10 5 10 4 10 2 10 3 ? 60 ? 40 ? 80 ? 20 0 ct (db) ? 100 f (khz) 020 15 510 002aaf034 ? 90 ? 60 ? 120 ? 30 0 ? 150 output amplitude (dbv)
sa58635_1 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 26 march 2010 16 of 30 nxp semiconductors sa58635 2 25 mw class-g stereo headphone driver a. f = 1 khz; r l =16 b. f = 1 khz; r l =32 (1) in phase. (2) out of phase. c. f = 1 khz; r l =32 ; v dd = 3.6 v fig 19. total harmonic distortion-plus-noise versus output power 002aaf011 p o (w) 10 ? 4 10 ? 1 10 ? 2 10 ? 3 10 ? 1 1 10 10 2 thd+n (%) 10 ? 2 v dd = 5.0 v 3.6 v 2.5 v 002aaf012 p o (w) 10 ? 4 10 ? 1 10 ? 2 10 ? 3 10 ? 1 10 ? 2 10 1 10 2 thd+n (%) 10 ? 3 v dd = 5.0 v 3.6 v 2.5 v 002aaf010 p o (w) 10 ? 4 10 ? 1 10 ? 2 10 ? 3 10 ? 1 1 10 10 2 thd+n (%) 10 ? 2 (1) (2)
sa58635_1 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 26 march 2010 17 of 30 nxp semiconductors sa58635 2 25 mw class-g stereo headphone driver a. r l = 16 b. r l =32 (1) p o = 1 mw / channel (2) p o = 4 mw / channel (3) p o = 10 mw / channel fig 20. total harmonic distortion-plus-noise versus frequency (v dd =2.5v) 002aaf013 f (hz) 10 10 5 10 4 10 2 10 3 10 ? 1 10 ? 2 1 thd+n (%) 10 ? 3 (1) (2) (3) 002aaf014 f (hz) 10 10 5 10 4 10 2 10 3 10 ? 1 10 ? 2 1 thd+n (%) 10 ? 3 (1) (3) (2) a. r l = 16 b. r l =32 (1) p o = 1 mw / channel (2) p o = 10 mw / channel (3) p o = 15 mw / channel fig 21. total harmonic distortion-plus-noise versus frequency (v dd =3.6v) 002aaf015 f (hz) 10 10 5 10 4 10 2 10 3 10 ? 1 10 ? 2 1 thd+n (%) 10 ? 3 (1) (3) (2) 002aaf016 f (hz) 10 10 5 10 4 10 2 10 3 10 ? 1 10 ? 2 1 thd+n (%) 10 ? 3 (1) (3) (2)
sa58635_1 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 26 march 2010 18 of 30 nxp semiconductors sa58635 2 25 mw class-g stereo headphone driver (1) p o = 1 mw / channel (2) p o = 10 mw / channel (3) p o = 15 mw / channel (1) p o = 1 mw / channel (2) p o = 10 mw / channel (3) p o = 20 mw / channel a. r l = 16 b. r l =32 fig 22. total harmonic distortion-plus-noise versus frequency (v dd =5v) 002aaf017 f (hz) 10 10 5 10 4 10 2 10 3 10 ? 1 10 ? 2 1 thd+n (%) 10 ? 3 (1) (3) (2) 002aaf018 f (hz) 10 10 5 10 4 10 2 10 3 10 ? 1 10 ? 2 1 thd+n (%) 10 ? 3 (1) (3) (2)
sa58635_1 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 26 march 2010 19 of 30 nxp semiconductors sa58635 2 25 mw class-g stereo headphone driver r l =32 ; f = 1 khz; v i(p-p) = 200 mv. based on single channel 1 demo board only. fig 23. start-up waveform r l =32 ; f = 1 khz; v i(p-p) = 200 mv; g v =4db. based on single channel 1 demo board only. fig 24. shutdown waveform time (ms) 002aaf035 voltage (v) vertical scale = 100 mv/div horizontal scale = 2 ms/div sda v o time (ms) 002aaf036 voltage (v) vertical scale = 100 mv/div horizontal scale = 2 ms/div sda v o
sa58635_1 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 26 march 2010 20 of 30 nxp semiconductors sa58635 2 25 mw class-g stereo headphone driver [1] t vd;ack = time for acknowledgement signal from scl low to sda (out) low. [2] t vd;dat = minimum time for sda data out to be valid following scl low. [3] a master device must internally provide a hold time of at least 300 ns for the sda signal (refer to the v il of the scl signal) in order to bridge the undefined region of scl?s falling edge. [4] the maximum t f for the sda and scl bus lines is specif ied at 300 ns. the maximum fall time (t f ) for the sda output stage is specified at 250 ns. this allows series protection resi stors to be connected between the sda and the scl pins and the sda/scl bus lines witho ut exceeding the maximum specified t f . [5] c b = total capacitance of one bus line in pf. [6] input filters on the sda and scl inputs suppress noise spikes less than 50 ns. table 13. dynamic characteristics for i 2 c-bus symbol parameter conditions standard-mode i 2 c-bus fast-mode i 2 c-bus unit min max min max f scl scl clock frequency 0 100 0 400 khz t buf bus free time between a stop and start condition 4.7 - 1.3 - s t hd;sta hold time (repeated) start condition 4.0 - 0.6 - s t su;sta set-up time for a repeated start condition 4.7 - 0.6 - s t su;sto set-up time for stop condition 4.0 - 0.6 - s t hd;dat data hold time 0 - 0 - ns t vd;ack data valid acknowledge time [1] 0.3 3.45 0.1 0.9 s t vd;dat data valid time [2] 0.3 3.45 0.1 0.9 s t su;dat data set-up time 250 - 100 - ns t low low period of the scl clock 4.7 - 1.3 - s t high high period of the scl clock 4.0 - 0.6 - s t f fall time of both sda and scl signals [3] [4] - 300 20 + 0.1c b [5] 300 ns t r rise time of both sda and scl signals - 1000 20 + 0.1c b [5] 300 ns t sp pulse width of spikes that must be suppressed by the input filter [6] -50 - 50ns
sa58635_1 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 26 march 2010 21 of 30 nxp semiconductors sa58635 2 25 mw class-g stereo headphone driver 13. application information 13.1 power supply dec oupling considerations the sa58635 is a stereo class-g headphone driv er amplifier that requires proper power supply decoupling to ensure the rated performance for thd+n and power efficiency. to decouple high frequency transients, power su pply spikes and digital noise on the power bus line, a low equivalent series resist ance (esr) capacito r, of typically 1 f is placed as close as possible to the avdd terminals of the device. it is important to place the decoupling capacitor at the power pins of the device because any resistance or inductance in the pcb trace between the device and the capacitor can cause a loss in efficiency. 10 f or greater capacitors are usually not required due to high psrr of the sa58635. 13.2 input capacitor selection the sa58635 does not require input coupling capacitors when used with a differential audio source that is biased from ? 1.3 v to +1.3 v. in other words, the input signal must be biased within the common-mode input voltage range. if high-pass filtering is required or if it is driven using a single-ended source, input coupling capacitors are required. the 3 db cut-off frequency is created by the input coupling capacitors and the input resistance of the sa58635. c i is the value of the input coupling capacitors. the input resistance (r i ) of the sa58635 is a function of amplifier gain; it will vary from approximately 11.06 k (minimum) to 28.47 k (maximum) (see ta b l e 1 4 ). fig 25. typical application 002aae120 inlp inln cpp cpn sda scl agnd sa58635 avdd sw hpvdd hpvss inrp inrn 3.3 h 10 f 2.3 v to 5.5 v audio source 1 f 1 f 1 f 1 f 2.2 f 2.2 f i 2 c-bus to headphone jack outl outr sgnd shield esd asip a1 a2 b2 c2 c1 ip5311cx5/lf
sa58635_1 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 26 march 2010 22 of 30 nxp semiconductors sa58635 2 25 mw class-g stereo headphone driver the 3 db cut-off frequency is calculated by equation 1 : (1) since the values of the input coupling capaci tor and the input resistor affects the low frequency performance of the audio amplifier, it is important to consider in the system design. table 14. input resistance as a function of amplifier gain steps r i (k ) gain (db) 0 28.468 ? 58.986 1 28.450 ? 55.185 2 28.421 ? 51.083 3 28.375 ? 47.117 4 28.298 ? 42.942 5 28.177 ? 38.819 6 27.995 ? 34.884 7 27.697 ? 30.758 8 27.302 ? 27.155 9 26.982 ? 24.997 10 26.587 ? 22.858 11 26.163 ? 20.981 12 25.550 ? 18.751 13 24.910 ? 16.826 14 24.183 ? 14.967 15 23.264 ? 12.953 16 22.173 ? 10.893 17 21.560 ? 9.846 18 20.947 ? 8.861 19 20.334 ? 7.925 20 19.607 ? 6.868 21 18.880 ? 5.857 22 18.267 ? 5.034 23 17.420 ? 3.930 24 16.572 ? 2.857 25 15.725 ? 1.804 26 14.998 ? 0.913 27 14.207 0.052 28 13.480 0.939 29 12.754 1.831 30 11.906 2.884 31 11.058 3.958 f 3db ? 1 2 r i c i ----------------------------- =
sa58635_1 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 26 march 2010 23 of 30 nxp semiconductors sa58635 2 25 mw class-g stereo headphone driver for a required 3 db cut-off frequency, equation 2 is used to determine c i : (2) for c i =1 f, the 3 db cut-off frequency will vary wit h gain settings. for gain setting of 4 db, the sa58635 input resistance, r i is 11.06 k (refer to table 14 ). substituting r i and c i in equation 1 yields f ? 3db =14.4hz. 13.3 pcb layout considerations component location is very important for pe rformance of the sa58635. place all external components very close to the device. placing decoupling capacitors directly at the power supply pins increases efficiency because the resistance and inductance in the trace between the device power supply pins and the decoupling capacitor causes a loss in power efficiency. the trace width and routing are also very important for power output and noise considerations. for the input pins (inlp, inln, inrp, inrn) , the traces must be symmetrical and run side-by-side to maximize common-mode cancellation. 13.4 thermal information the sa58635 16-bump wlcsp package ground bumps are soldered directly to the pcb heat spreader. the heat spreader is the pcb ground plane or special heat sinking layer designed into the pcb. the thickness and area of the heat spreader may be maximized to optimize heat transfer and achieve lower package thermal resistance. c i 1 2 r i f 3db ? ------------------------------------ =
sa58635_1 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 26 march 2010 24 of 30 nxp semiconductors sa58635 2 25 mw class-g stereo headphone driver 14. package outline fig 26. package outline SA58635UK (wlcsp16) references outline version european projection issue date iec jedec jeita SA58635UK SA58635UK_po 10-01-18 10-01-19 unit mm max nom min 0.615 0.560 0.505 0.23 0.20 0.17 0.29 0.26 0.23 1.725 1.695 1.665 1.725 1.695 1.665 0.4 1.2 0.02 0.03 a dimensions w lcsp16: wafer level chip-size package; 16 balls; 1.7 x 1.7 x 0.56 mm sa58635u k a 1 a 2 0.385 0.360 0.335 bdeee 1 1.2 e 2 vw 0.01 y 0 0.5 1 mm scale ball a1 index area b a d e detail x a 1 a 2 a b e 2 e 1 e e a c b ? v c ? w ball a1 index area a b c d 14 3 2 y x
sa58635_1 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 26 march 2010 25 of 30 nxp semiconductors sa58635 2 25 mw class-g stereo headphone driver 15. soldering of wlcsp packages 15.1 introduction to soldering wlcsp packages this text provides a very brief insight into a complex technology. a more in-depth account of soldering wlcsp (wafer level chip-size packages) can be found in application note an10439 ?wafer level chip scale package? and in application note an10365 ?surface mount reflow soldering description? . wave soldering is not su itable for this package. all nxp wlcsp packages are lead-free. 15.2 board mounting board mounting of a wlcsp requires several steps: 1. solder paste printing on the pcb 2. component placement with a pick and place machine 3. the reflow soldering itself 15.3 reflow soldering key characteristics in reflow soldering are: ? lead-free versus snpb solderi ng; note that a lead-free reflow process usually leads to higher minimum peak temperatures (see figure 27 ) than a pbsn process, thus reducing the process window ? solder paste printing issues, such as sm earing, release, and adjusting the process window for a mix of large and small components on one board ? reflow temperature profile; this profile includ es preheat, reflow (in which the board is heated to the peak temperature), and coo ling down. it is imper ative that the peak temperature is high enough for the solder to make reliable solder joints (a solder paste characteristic) while being low enough that the packages and/or boards are not damaged. the peak temperature of the package depends on package thickness and volume and is classified in accordance with ta b l e 1 5 . moisture sensitivity precautions, as indicat ed on the packing, must be respected at all times. studies have shown that small packages reach higher temperatures during reflow soldering, see figure 27 . table 15. lead-free process (from j-std-020c) package thickness (mm) package reflow temperature ( c) volume (mm 3 ) < 350 350 to 2000 > 2000 < 1.6 260 260 260 1.6 to 2.5 260 250 245 > 2.5 250 245 245
sa58635_1 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 26 march 2010 26 of 30 nxp semiconductors sa58635 2 25 mw class-g stereo headphone driver for further information on temperature profiles, refer to application note an10365 ?surface mount reflow soldering description? . 15.3.1 stand off the stand off between the substrate and the chip is determined by: ? the amount of printed solder on the substrate ? the size of the solder land on the substrate ? the bump height on the chip the higher the stand off, the better the stresses are released due to tec (thermal expansion coefficient) differences between substrate and chip. 15.3.2 quality of solder joint a flip-chip joint is considered to be a good joint when the entire solder land has been wetted by the solder from the bump. the surface of the joint should be smooth and the shape symmetrical. the soldered joints on a chip should be uniform. voids in the bumps after reflow can occur during the reflow process in bumps with high ratio of bump diameter to bump height, i.e. low bumps with large diameter. no failures have been found to be related to these voids. solder joint inspection after reflow can be done with x-ray to monitor defects such as bridging, open circuits and voids. 15.3.3 rework in general, rework is not recommended. by rework we mean the process of removing the chip from the substrate and replacing it with a new chip. if a chip is removed from the substrate, most solder balls of the chip will be damaged. in that case it is recommended not to re-use the chip again. msl: moisture sensitivity level fig 27. temperature profiles for large and small components 001aac84 4 temperature time minimum peak temperature = minimum soldering temperature maximum peak temperature = msl limit, damage level peak temperature
sa58635_1 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 26 march 2010 27 of 30 nxp semiconductors sa58635 2 25 mw class-g stereo headphone driver device removal can be done when the substrate is heated until it is certain that all solder joints are molten. the chip can then be carefully removed from the substrate without damaging the tracks and solder lands on the substrate. removing the device must be done using plastic tweezers, because me tal tweezers can damage the silicon. the surface of the substrate should be carefully cleaned and all solder and flux residues and/or underfill remove d. when a new chip is placed on the substrate, use the flux process instead of solder on the solder lands. apply flux on the bumps at the chip side as well as on the solder pads on the substrate. place and align the new chip while viewing with a microscope. to reflow the solder, use the solder profile shown in application note an10365 ?surface mount reflow soldering description? . 15.3.4 cleaning cleaning can be done after reflow soldering. 16. abbreviations 17. revision history table 16. abbreviations acronym description asip application specific in struction-set processor dvd digital versatile disk esd electrostatic discharge esr equivalent series resistance fb feedback hp headphone i 2 c-bus inter-integrated circuit bus pc personal computer pcb printed-circuit board table 17. revision history document id release date data sheet status change notice supersedes sa58635_1 20100326 product data sheet - -
sa58635_1 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 26 march 2010 28 of 30 nxp semiconductors sa58635 2 25 mw class-g stereo headphone driver 18. legal information 18.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 18.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 18.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interrupt ion, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer?s third party customer(s) (hereinafter both referred to as ?application?). it is customer?s sole responsibility to check whether the nxp semiconductors product is suitable and fit for the application planned. customer has to do all necessary testing for the application in order to avoid a default of the application and the product. nxp semiconducto rs does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicond uctors product is au tomotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive sp ecifications and standards, customer (a) shall use the product without nx p semiconductors? warranty of the document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this docu ment contains the product specification.
sa58635_1 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 26 march 2010 29 of 30 nxp semiconductors sa58635 2 25 mw class-g stereo headphone driver product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully in demnifies nxp semi conductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive appl ications beyond nxp semiconductors? standard warranty and nxp semicond uctors? product specifications. 18.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. i 2 c-bus ? logo is a trademark of nxp b.v. 19. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors sa58635 2 25 mw class-g stereo headphone driver ? nxp b.v. 2010. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 26 march 2010 document identifier: sa58635_1 please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 20. contents 1 general description . . . . . . . . . . . . . . . . . . . . . . 1 2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 4 ordering information . . . . . . . . . . . . . . . . . . . . . 2 5 block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 pinning information . . . . . . . . . . . . . . . . . . . . . . 3 6.1 pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6.2 pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 functional description . . . . . . . . . . . . . . . . . . . 4 7.1 device address . . . . . . . . . . . . . . . . . . . . . . . . . 4 7.2 control register . . . . . . . . . . . . . . . . . . . . . . . . . 4 7.3 register definitions . . . . . . . . . . . . . . . . . . . . . . 4 7.3.1 mode1 register, mode1 . . . . . . . . . . . . . . . . . 5 7.3.2 volume control register, volctl . . . . . . . . . . . 5 7.3.3 high-impedance register, hiz . . . . . . . . . . . . . . 5 7.3.4 chip identification register, id . . . . . . . . . . . . . . 6 7.3.5 test register 1, test1 . . . . . . . . . . . . . . . . . . . 6 7.4 volume control . . . . . . . . . . . . . . . . . . . . . . . . . 7 7.5 power-on reset . . . . . . . . . . . . . . . . . . . . . . . . . 8 8 characteristics of the i 2 c-bus . . . . . . . . . . . . . 8 8.1 bit transfer . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 8.1.1 start and stop conditions . . . . . . . . . . . . . . 8 8.2 system configuration . . . . . . . . . . . . . . . . . . . . 9 8.3 acknowledge . . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 bus transactions . . . . . . . . . . . . . . . . . . . . . . . 10 10 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . 11 11 static characteristics. . . . . . . . . . . . . . . . . . . . 12 12 dynamic characteristics . . . . . . . . . . . . . . . . . 13 13 application information. . . . . . . . . . . . . . . . . . 21 13.1 power supply decoupling considerations . . . . 21 13.2 input capacitor selection . . . . . . . . . . . . . . . . . 21 13.3 pcb layout considerations . . . . . . . . . . . . . . . 23 13.4 thermal information . . . . . . . . . . . . . . . . . . . . 23 14 package outline . . . . . . . . . . . . . . . . . . . . . . . . 24 15 soldering of wlcsp packages. . . . . . . . . . . . 25 15.1 introduction to soldering wlcsp packages . . 25 15.2 board mounting . . . . . . . . . . . . . . . . . . . . . . . 25 15.3 reflow soldering . . . . . . . . . . . . . . . . . . . . . . . 25 15.3.1 stand off . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 15.3.2 quality of solder joint . . . . . . . . . . . . . . . . . . . 26 15.3.3 rework . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 15.3.4 cleaning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 16 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 27 17 revision history . . . . . . . . . . . . . . . . . . . . . . . . 27 18 legal information . . . . . . . . . . . . . . . . . . . . . . 28 18.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 28 18.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 18.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . 28 18.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . 29 19 contact information . . . . . . . . . . . . . . . . . . . . 29 20 contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30

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